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Projects / Programmes source: ARIS

Novel Sensor and Actuator Structures”

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Periods
January 1, 1999 - December 31, 2003
Research activity

Code Science Field Subfield
2.09.00  Engineering sciences and technologies  Electronic components and technologies   
2.15.00  Engineering sciences and technologies  Metrology   

Code Science Field
T150  Technological sciences  Material technology 
T170  Technological sciences  Electronics 
T181  Technological sciences  Remote sensing 
T190  Technological sciences  Electrical engineering 
T115  Technological sciences  Medical technology 
Evaluation (rules)
source: COBISS
Evaluation of bibliographic research performance indicators according to ARIS methodology
Citations Citations for bibliographic records in COBIB.SI that are linked to records in citation databases
source: WoS source: Scopus source: COBISS
Researchers (9)
no. Code Name and surname Research area Role Period No. of publications
1.  11682  MSc Uroš Aljančič  Electronic components and technologies  Researcher  2003  206 
2.  01926  PhD Slavko Amon  Electronic components and technologies  Head  2001 - 2003  473 
3.  17125  Matjaž Cvar    Researcher  2001 - 2003  8 
4.  04721  PhD Andrej Levstek  Electronic components and technologies  Researcher  2003  103 
5.  20186  PhD Matej Možek  Electronic components and technologies  Researcher  2001 - 2003  270 
6.  02313  PhD Boštjan Peršič  Energy engineering  Researcher  2001 - 2002  138 
7.  05075  PhD Drago Resnik  Electronic components and technologies  Researcher  2001 - 2003  261 
8.  02303  PhD Gabrijel Tomšič  Mathematics  Researcher  2001 - 2002  111 
9.  04383  PhD Danilo Vrtačnik  Electronic components and technologies  Researcher  2001 - 2003  309 
Organisations (1)
no. Code Research organisation City Registration number No. of publications
1.  1538  University of Ljubljana, Faculty of Electrical Engineering  Ljubljana  1626965  27,771 
Abstract
In the center of the research work in the field of semiconductor, sensor and actuator structures today are investigations of basic effects occurring in these, as acknowledged by many experts from different fields, for future development of mankind basic structures. Based on detailed analysis of existing literature as well as on experiences obtained from our past research work in these fields, the following research programm is considered. In the field of sensor structures for radiation detection, several topics of importance will be investigated: modeling and design of new improved detector structures; influence of detector structure on generated carriers collection efficiency; operation, structures and integration of JFETs; dependence of detector electric parameters on structural parameters; basic effects in detector processing procedure; measurement methods for improved characterisation. In the field of Si and SiGe structures, several topics of importance will be investigated: new junction termination structures; breakdown and leakage properties of pn-junctions; high doping effects and related apparent band gap narrowing, effective mass model for wide temperature, doping and Ge content region; modeling; improved characterisation methods. In the field of micromachining of silicon for 3D structures, several topics of importance will be investigated: modeling; advanced structures (new structures based on new crystall planes, bossed diaphragms, overpressure protection structures, piezoresistive and piezoelectric structures); protective layers; (an)isotropic etching; wafer bonding; multilevel micromachining; realization of sensor and actuator MEMS structures.
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