Projects / Programmes source: ARIS

Three-dimensional elemental tomography of thin films and surfaces

Research activity

Code Science Field Subfield
1.02.05  Natural sciences and mathematics  Physics  Medium- and high-energy physics 

Code Science Field
P180  Natural sciences and mathematics  Metrology, physical instrumentation 
ion microbeam, ion accelerator, spectroscopy, elemental analysis
Evaluation (rules)
source: COBISS
Researchers (3)
no. Code Name and surname Research area Role Period No. of publicationsNo. of publications
1.  12314  PhD Primož Pelicon  Physics  Head  2002 - 2004  579 
2.  05591  MSc Zdravko Rupnik  Physics  Researcher  2002 - 2004  182 
3.  18891  PhD Jurij Simčič  Physics  Researcher  2002 - 2004  136 
Organisations (1)
no. Code Research organisation City Registration number No. of publicationsNo. of publications
1.  0106  Jožef Stefan Institute  Ljubljana  5051606000  88,063 
Measurement method of three-dimensional elemental distributions by means of resonance reactions (p,ă) will be developed at Ljubljana ion microbeam, where lateral resolution of 1 micrometer and depth resolution of up to ten nanometers is expected. By applying a narrow resonance (Ă< 1 keV), the depth resolution will be dominantly determined by energy straggling during the penetration of ions through the sample. The analyzing depth will be selected by the energy of the proton beam from the accelerator. The analyzing range is in this case determined by the energy of the resonance and could be of up to 30 micrometers. By means of (p, ă) reactions, the measurements of 11B, 13C, 14N, 15N, 18O, 19F, 23Na, 26Mg, 27Al and 30Si will be configured. Established threedimensional tomography by means of Rutherford backscattering spectroscopy will be improved by applying the IBA Data Furnace code. In this way, time consuming fittings of RBS spectra will be replaced by automatic numerical algorithm, based on “simulated annealing”. Mechanical beam chopper will be developed for precise measurements of proton currents. Number of scattered protons will be a measure for the accumulated charge. In this way, we will approach 1% precision in the normalization of the measurements. Dead time and pile-uof ADC will be corrected by means of fast electrostatic deflection of the beam at ion sources. Ion Beam Induced Charge method will be developed to enable sub-micron mapping of microelectronic devices.
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