Projects / Programmes
Three-dimensional elemental tomography of thin films and surfaces
Code |
Science |
Field |
Subfield |
1.02.05 |
Natural sciences and mathematics |
Physics |
Medium- and high-energy physics |
Code |
Science |
Field |
P180 |
Natural sciences and mathematics |
Metrology, physical instrumentation |
ion microbeam, ion accelerator, spectroscopy, elemental analysis
Researchers (3)
no. |
Code |
Name and surname |
Research area |
Role |
Period |
No. of publicationsNo. of publications |
1. |
12314 |
PhD Primož Pelicon |
Physics |
Head |
2002 - 2004 |
579 |
2. |
05591 |
MSc Zdravko Rupnik |
Physics |
Researcher |
2002 - 2004 |
182 |
3. |
18891 |
PhD Jurij Simčič |
Physics |
Researcher |
2002 - 2004 |
136 |
Organisations (1)
no. |
Code |
Research organisation |
City |
Registration number |
No. of publicationsNo. of publications |
1. |
0106 |
Jožef Stefan Institute |
Ljubljana |
5051606000 |
88,063 |
Abstract
Measurement method of three-dimensional elemental distributions by means of resonance reactions (p,ă) will be developed at Ljubljana ion microbeam, where lateral resolution of 1 micrometer and depth resolution of up to ten nanometers is expected. By applying a narrow resonance (Ă< 1 keV), the depth resolution will be dominantly determined by energy straggling during the penetration of ions through the sample. The analyzing depth will be selected by the energy of the proton beam from the accelerator. The analyzing range is in this case determined by the energy of the resonance and could be of up to 30 micrometers. By means of (p, ă) reactions, the measurements of 11B, 13C, 14N, 15N, 18O, 19F, 23Na, 26Mg, 27Al and 30Si will be configured. Established threedimensional tomography by means of Rutherford backscattering spectroscopy will be improved by applying the IBA Data Furnace code. In this way, time consuming fittings of RBS spectra will be replaced by automatic numerical algorithm, based on “simulated annealing”. Mechanical beam chopper will be developed for precise measurements of proton currents. Number of scattered protons will be a measure for the accumulated charge. In this way, we will approach 1% precision in the normalization of the measurements. Dead time and pile-uof ADC will be corrected by means of fast electrostatic deflection of the beam at ion sources. Ion Beam Induced Charge method will be developed to enable sub-micron mapping of microelectronic devices.