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Interfacial amorphization and Ferme level pinning

Research activity

Code Science Field Subfield
1.02.00  Natural sciences and mathematics  Physics   

Code Science Field
P265  Natural sciences and mathematics  Semiconductory physics 
Keywords
metal/semiconductor interface, Fermi level pinning; interface amorphization
Evaluation (rules)
source: COBISS
Researchers (6)
no. Code Name and surname Research area Role Period No. of publicationsNo. of publications
1.  01048  PhD Bruno Cvikl  Physics  Researcher  2004 - 2007  215 
2.  03590  PhD Igor Jenčič  Physics  Head  2004 - 2007  151 
3.  15413  PhD Dean Korošak  Physics  Researcher  2004  232 
4.  01487  MSc Matjaž Koželj  Electronic components and technologies  Technical associate  2004 - 2007  116 
5.  01053  Edvard Stanisla Krištof  Energy engineering  Researcher  2004  46 
6.  18152  PhD Marko Pinterič  Physics  Researcher  2004  108 
Organisations (1)
no. Code Research organisation City Registration number No. of publicationsNo. of publications
1.  0106  Jožef Stefan Institute  Ljubljana  5051606000  91,936 
Abstract
We propose, that the systematic investigation of modification of metal/semiconductor interface dipole charges, thought to be principally responsible for Fermi level pinning in semiconductors, is to be undertaken by the use of the ionized cluster beam, ICB, deposition method. It has been observed, that by this method, by an appropriate choice of the translational energy of deposited metal ions, a controlled local structural lattice disorder in the close vicinity of semiconductor interface can be induced. We have previously shown that for ICB deposited metal/Si contacts, on n- and p-doped Si substrata, the measure of the local structural diorder is direcly related the the appearance of the so called excess capacitance which is for the respective Schottky junction separately determined by C-U as well as I-U measurements. The excess capacitance is a direct reflectence of the induced net charge arising on account of the local structural disorder at or near the appropriate/metal semiconductor interface. It is proposed that a number of ICB deposited metal/GaAs as well as metal/SiGe compound semiconductor Schottky junctions are to be deposited and their electrical properties measured. It is proposed what further investigation of the induced interfacial net charge density physical properties are the prerequsites for the successfull interpretation, in terms of Fermi level pinning, of the C-U and I-U results to be obtained on the above described ICB deposited contacts.
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