Projects / Programmes
Interfacial amorphization and Ferme level pinning
Code |
Science |
Field |
Subfield |
1.02.00 |
Natural sciences and mathematics |
Physics |
|
Code |
Science |
Field |
P265 |
Natural sciences and mathematics |
Semiconductory physics |
metal/semiconductor interface, Fermi level pinning; interface amorphization
Researchers (6)
Organisations (1)
no. |
Code |
Research organisation |
City |
Registration number |
No. of publicationsNo. of publications |
1. |
0106 |
Jožef Stefan Institute |
Ljubljana |
5051606000 |
90,724 |
Abstract
We propose, that the systematic investigation of modification of metal/semiconductor interface dipole charges, thought to be principally responsible for Fermi level pinning in semiconductors, is to be undertaken by the use of the ionized cluster beam, ICB, deposition method. It has been observed, that by this method, by an appropriate choice of the translational energy of deposited metal ions, a controlled local structural lattice disorder in the close vicinity of semiconductor interface can be induced. We have previously shown that for ICB deposited metal/Si contacts, on n- and p-doped Si substrata, the measure of the local structural diorder is direcly related the the appearance of the so called excess capacitance which is for the respective Schottky junction separately determined by C-U as well as I-U measurements. The excess capacitance is a direct reflectence of the induced net charge arising on account of the local structural disorder at or near the appropriate/metal semiconductor interface. It is proposed that a number of ICB deposited metal/GaAs as well as metal/SiGe compound semiconductor Schottky junctions are to be deposited and their electrical properties measured. It is proposed what further investigation of the induced interfacial net charge density physical properties are the prerequsites for the successfull interpretation, in terms of Fermi level pinning, of the C-U and I-U results to be obtained on the above described ICB deposited contacts.