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Projects / Programmes source: ARIS

Nanostructural engineering of semicoducting materials

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Research activity

Code Science Field Subfield
2.04.00  Engineering sciences and technologies  Materials science and technology   

Code Science Field
T153  Technological sciences  Ceramic materials and powders 
Keywords
semiconducting materials, exploiting 2D nanostuctured phases in bottom-up design of materials, nanostructural engineering
Evaluation (rules)
source: COBISS
Evaluation of bibliographic research performance indicators according to ARIS methodology
Citations Citations for bibliographic records in COBIB.SI that are linked to records in citation databases
source: WoS source: Scopus source: COBISS
Researchers (5)
no. Code Name and surname Research area Role Period No. of publications
1.  06627  PhD Slavko Bernik  Materials science and technology  Researcher  2005 - 2008  621 
2.  19029  PhD Nina Daneu  Materials science and technology  Researcher  2005 - 2008  424 
3.  02556  PhD Goran Dražić  Materials science and technology  Researcher  2005 - 2008  1,029 
4.  15654  PhD Matej Andrej Komelj  Materials science and technology  Researcher  2005 - 2008  176 
5.  10083  PhD Aleksander Rečnik  Chemistry  Head  2005 - 2008  651 
Organisations (1)
no. Code Research organisation City Registration number No. of publications
1.  0106  Jožef Stefan Institute  Ljubljana  5051606000  90,753 
Abstract
Physical properties of ceramic materials are strongly influenced by the inherent proprerties of the bulk crystalline material, by grain boundary effects and the effects caused by the presence of fault structures. Out of these, special grain boundaries appear to be of the top importance from both the microstructural and the compositional point of view. Special boundaries are planar faults, which often occupy only one atomic monolayer in slightly altered structural environment and different chemical composition compared to the adjacent layers of bulk crystal phase. Special boundaries form during crystal growth and cannot be produced by deformation. As recently shown in several polycrystalline materials, these boundaries are in fact responsible for anisotropic and exaggerated grain growth. The influence of special boundaries on microstructure development of the ceramic and consequently on the physical properties is often observed, and yet the knowledge about the nucleation mechanisms or the atomistic structure and chemistry of such structural peculiarities has not evolved. One of the main reasons is the availability of the instrumentation that allows the atomic level studies of structure and composition of special boundaries and interfaces, combined with an appropriate expertise in materials science. In order to determine the mechanism of their formation one must commence not only with the information on the preparation conditions under which such a phenomenon takes place, but moreover with a fundamental knowledge about their atomic structure and chemistry. The major task within the proposed research will be to correlate atomistic structure and chemistry of special boundaries with the exaggerated grain growth and the final physical properties of the material. As shown in the following, bottom-up approach will provide the means for nanostructural engineering of electronic devices based on these materials.
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