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Projects / Programmes source: ARIS

Raziskava reakcij na površinah in notranjih faznih mejah (Slovene)

Research activity

Code Science Field Subfield
2.09.00  Engineering sciences and technologies  Electronic components and technologies   

Code Science Field
T150  Technological sciences  Material technology 
T155  Technological sciences  Coatings and surface treatment 
Keywords
Surfaces, interfaces, thin-films, diffusion, surface analysis methods, AES , SPEM, XPS, TEM, plasma, sol-gel synthesis, contact surfaces
Evaluation (rules)
source: COBISS
Researchers (11)
no. Code Name and surname Research area Role Period No. of publicationsNo. of publications
1.  08028  Miha Kocmur    Researcher  1998 - 2001  15 
2.  01703  Lidija Koller  Electronic components and technologies  Researcher  1999 - 2001  80 
3.  15703  PhD Janez Kovač  Electronic components and technologies  Researcher  1996 - 2001  680 
4.  10429  PhD Miran Mozetič  Electronic components and technologies  Researcher  1998 - 2001  1,356 
5.  03066  PhD Vincenc Nemanič  Electronic components and technologies  Researcher  1999 - 2001  245 
6.  09105  Borut Praček  Electronic components and technologies  Researcher  1998 - 2001  113 
7.  10497  MSc Sonja Spruk  Electronic components and technologies  Researcher  1998 - 2001  29 
8.  17622  Janez Trtnik    Researcher  1998 - 2001  18 
9.  20048  PhD Alenka Vesel  Electronic components and technologies  Researcher  1996 - 2001  695 
10.  01741  PhD Anton Zalar  Electronic components and technologies  Head  1999 - 2001  383 
11.  03366  Marko Žumer  Electronic components and technologies  Researcher  1996 - 2001  110 
Abstract
The early-stage interfacial reactions between amorphous Al2O3 and crystalline Ti, Ti3Al and TiAl thin films were studied by means of Auger electron spectroscopy (AES) depth profiling. The heating of the Al2O3/Ti and Al2O3/Ti3Al bilayers induced the diffusion of O and Al into the Ti and Ti3Al layers. The beginning of the interdiffusion was observed at about 425oC for both layers. No chemical reaction could be found at the Al2O3/TiAl interface, although this sample was heated up to the final temperature of 700oC. A strong influence of the thin-film thickness on the kinetics of the reaction in the Al2O3/Ti bilayers was observed. The formation and evolution of different phases on Ni/Si(111) system were studied by scanning photoelectron microscopy (SPEM) at the Synchrotron of Trieste. The samples with different phases on surfaces were prepared: (Sqrt(3) x Sqrt(3)), (1x1), NiSi and NiSi2 islands. The different phases were attributed to the different mass transport mechanisms of Ni and Si. Investigation of Ni/SiOx/Si structure showed that diffusion of the metal through the oxide barrier occured at local imperfections in the this layer. Different model and industrial samples were treated in hydrogen plasma and we found that the power dissipated on the surface during plasma treatment depended on the state of the surface. The temperature of the samples changed simultaneously as soon as the surface layers of plasma treated samples changed their composition. Thin films of tin oxide, doped with europium or terbium, were deposited by sol-gel dip-coating method. The layers were 150 nm thick, homogenous and became crystalline after 8 hours of heating at 500 °C. The results of EXAFS structural analysis showed that the local surrounding of europium ions in amorphous silica host is composed of seven oxygen atoms at the distance of 0,23 nm. Processes of outgassing and high frequency plasma cleaning of thin films on the surface of Ag contact materials (AgNi 0,15, AgNi 10, AgCdO 10) and some polymer materials (Crastin, Lexan, Araldit, Ultramid) for elements in professional electronics were studied.
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