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Projects / Programmes
The mechanisms of structural changes in semiconductors
Research activity
| Code | Science | Field | Subfield |
|---|---|---|---|
| 1.02.01 | Natural sciences and mathematics | Physics | Physics of condesed matter |
| Code | Science | Field |
|---|---|---|
| P250 | Natural sciences and mathematics | Condensed matter: structure, thermal and mechanical properties, crystallography, phase equilibria |
| T111 | Technological sciences | Imaging, image processing |
Keywords
amorphization, recrystallization, semiconductors, ion implantation, image processing
Evaluation
(metodology)
Citations
Citations for bibliographic records in COBIB.SI that are linked to records in citation databases
Organisations (1) , Researchers (1)
0106 Jožef Stefan Institute
| no. | Code | Name and surname | Research area | Role | Period | No. of publicationsNo. of publications |
|---|---|---|---|---|---|---|
| 1. | 03590 | Physics | Head | 1998 - 2001 | 160 |
Abstract
The nature and the extent of amorphous structures created in semiconductors during ion implantation or fast neutron irradiation will be studied. By using electron beams the recrystallization of isolated amorphous zones in ion implanted samples will be induced and the mechanism of this process will be investigated in detail. The neutron irradiations will be focused on the relation between microstrcture changes and electrical characteristics of semiconductor detectors.