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Projects / Programmes source: ARIS

Investigations of biased molecular reorientations and studies of metal/semiconductor potential barriers

Research activity

Code Science Field Subfield
1.02.01  Natural sciences and mathematics  Physics  Physics of condesed matter 

Code Science Field
P260  Natural sciences and mathematics  Condensed matter: electronic structure, electrical, magnetic and optical properties, supraconductors, magnetic resonance, relaxation, spectroscopy 
P265  Natural sciences and mathematics  Semiconductory physics 
Keywords
Schottky barrier; disorder induced localized gap states;
Evaluation (rules)
source: COBISS
Researchers (4)
no. Code Name and surname Research area Role Period No. of publicationsNo. of publications
1.  01048  PhD Bruno Cvikl  Physics  Head  1999 - 2001  215 
2.  11343  PhD Renata Jecl  Hydrology  Researcher  1998 - 2001  219 
3.  15413  PhD Dean Korošak  Physics  Researcher  1999 - 2001  232 
4.  03025  PhD Jožef Lep  Mathematics  Researcher  1996 - 2001  108 
Organisations (2)
no. Code Research organisation City Registration number No. of publicationsNo. of publications
1.  0106  Jožef Stefan Institute  Ljubljana  5051606000  91,936 
2.  0797  University of Maribor, Faculty of Civil Engineering, Transportation Engineering and Architecture  Maribor  5089638011  12,918 
Abstract
The reverse biased voltage, Ur, room temperature C-V characteristics of the ionized cluster beam deposited, ICB, metal/p-Si(100), metal=Pb and Ag, Schottky junctions, are interpreted in terms of the model of metal/metal-enriched interlayer/p-Si substrate structure. It is shown, that the resultant depletion layer capacitance, C, of such a structure, derived in the depletion approximation by incorporating the (modeled) biased voltage dependent excess interface charge density, could successfully describe the low frequency C-V data, as measured on these ICB, Ua=300 V, samples. It is observed that the results of the depletion layer capacitance calculations could successfully predict also the unusual room temperature C-V characteristics of Ag/p-Si(100) Schottky structure, where a strong maximum, at small reverse biased voltages, has been measured. This fact represents, what is believed, the first direct evidence, of the existence of the interface charge density bias voltage dependence.
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