2.) In this paper we presented the method for determination of electric field in highly irradiated silicon detectors using Edge-TCT technique. It enables precise determination of electric field in high irradiated silicon detectors, which is not possible with other techniques and methods. We explained in details of analysis, conditions needed for evaluation and limitations of the method. We also explained the electric field profiles under different bias polarities.
COBISS.SI-ID: 32855847
3.) We presented the results of prototype LGAD sensors for timing measurements from HPK. The sensors were irradiated with reactor neutrons. We have determined the time resolution, charge collection and optimal CFD parameters as a function of fluence and applied bias voltage. The time resolution measured were in range 20-50 ps. The measured results agreed well with simulation.
COBISS.SI-ID: 33137703
6.) We measured as the first the time resolution of 3D silicon detectors with small 50x50 um2 cells. These detectors present almost ideal choice for timing detector in very high radiation fields, where LGADs fail. The time resolution of around 70 ps was obtained which agreed very well with simulated values. The simulations showed also projection of their operation to different bias voltages, fluences and electrode configurations. The performance shouldn’t degrade with irradiations and is at much lower bias voltages and higher fluences comparable to that of LGADs.
COBISS.SI-ID: 33307175