We investigate the transport mechanism of poly-Si based carrier-selective junctions using the two-dimensional numerical semiconductor device simulations. The detailed transport model considers the charge carrier transport through the pinholes as well as tunneling through a very thin silicon oxide simultaneously. For the verification of the simulation model, the complete temperature dependent transfer length method is modeled and its results are verified with measurements of two different samples. By means of rigorous simulations, the influence of different pinhole geometrical and material parameters on junction resistivity are investigated and explained in detail. From the presented results, the fundamental understanding needed for optimizing the poly-Si-based carrier selective junction in respect to the main design parameters such as doping level in poly-Si, annealing time, silicon oxide thickness, and pinhole density is given. The detailed analysis shows the pinhole channel plays the most crucial role in the design of poly-Si-based carrier-selective junctions if the silicon oxide layer thickness is larger than 2 nm.
COBISS.SI-ID: 12725076
In ultra-thin chalcopyrite solar cells and photovoltaic modules, efficient light management is required to increase the photocurrent and to gain in conversion efficiency. In this work we employ optical modelling to investigate different optical approaches and quantify their potential improvements in the short-circuit current density of Cu(In, Ga)Se2 (CIGS) devices. For structures with an ultra-thin (500 nm) CIGS absorber, we study the improvements related to the introduction of (i) highly reflective metal back reflectors, (ii) internal nano-textures applied to the substrate and (iii) external micro-textures by using a light management foil. In the analysis we use CIGS devices in a PV module configuration, thus, solar cell structure including encapsulation and front glass. A thin Al2O3 layer was considered in the structure at the rear side of CIGS for passivation and diffusion barrier for metal reflectors. We show that not any individual aforementioned approach is sufficient to compensate for the short circuit drop related to ultra-thin absorber, but a combination of a highly reflective back contact and textures (internal or external) is needed to obtain and also exceed the short-circuit current density of a thick (1800 nm) CIGS absorber.
COBISS.SI-ID: 12528468
Perovskite solar cells (PSC) have shown that under laboratory conditions they can compete with established photovoltaic technologies. However, controlled laboratory measurements usually performed do not fully resemble operational conditions and field testing outdoors, with day-night cycles, changing irradiance and temperature. In this contribution, we evaluate the performance of PSCs in the rooftop field test, exposed to real weather conditions. The 1 cm2 single-junction devices, with an initial average power conversion efficiency of 18.5% are tracked outdoors in maximum power point over several weeks. In parallel, irradiance and air temperature are recorded, allowing us to correlate outside factors with generated power. To get more insight into outdoor device performance, a comprehensive set of laboratory measurements under different light intensities (10% to 120% of AM1.5) and temperatures is performed. From these results a low power temperature coefficient of 0.17% K-1 is extracted in the temperature range between 25 °C and 85 °C. By incorporating these temperature- and light-dependent PV parameters into our energy yield model, we are able to correctly predict the generated energy of our devices, thus validating the energy yield model. In addition, degradation of the tested devices can be tracked precisely from the difference between measured and modelled power.
COBISS.SI-ID: 00000000