Electroluminescence as a spatial characterisation technique is used to characterise dye-sensitised solar cells. The obtained image is compared with a light beam-induced current scan image and a transmittance image. Results reveal the presence of inhomogeneities including those resulting from the topography of the cell and from defects, for example, presence of iodine crystals in the electrolyte, localised absence of dye in the active layer and poor adhesion of the active layer to the electrodes. The ability to identify such inhomogeneities within a relatively short acquisition time gives electroluminescence an advantage over the light beam-induced current technique.
COBISS.SI-ID: 9246804
A steady-state numerical model of DSSC is based on continuity and transport equations for electrons, iodide and triiodide ions. The cell model consists of an active layer, where photovoltaic effect including diffusion of electrons in mesoporous TiO2 and ions in electrolyte takes place, and a bulk electrolyte layer, where only ions diffuse. Exponential distribution of trap states in TiO2 and Gaussian distributions of energy levels in the electrolyte within active layer are included in modeling of the recombination dynamics, according to Shockley-Read-Hall statistics and Marcus-Gerischer electron transfer theory. Recombinations at the front contact and a voltage drop at the platinum covered back contact are included in the model. Simulation results are compared with the measured currente-voltage characteristics at different light intensities over 4 decades. Optimization of cell efficiency regarding active layer and electrolyte layer thickness is carried out. Simulation results show that best efficiency is achieved when electrolyte layer thickness is minimized as much as possible and that active layer thickness is traded off with respect to recombination rates and/or diffusion limited current determined with the selection of the electrolyte.
COBISS.SI-ID: 8511316
High-efficiency solar cells and modules exhibit strong capacitive character resulting in limited speed of transient responses. A too fast I-V curve measurement can thus introduce a significant error due to its internal capacitances. This paper analyses the I-V curve error of a measured solar cell or module in light of scan time and irradiance level. It rests on a two-diode solar cell model extended by two bias-dependent capacitances, modelling the junction, and the diffusion capacitance. A method for determination of all extended model parameters from a quasistatic I-V curve and open-circuit voltage decay measurement is presented and validated. Applicability of the extended model and the developed parameter extraction method to PV modules is demonstrated and confirmed. SPICE simulations of the extended model are used to obtain the I-V curve error versus scan time dependence and the I-V curve hysteresis. Determination of the optimal scan time is addressed, and finally the influence of the irradiance level on the I-V curve scan time and error is revealed. The method is applied but is not limited to three different wafer-based silicon solar cell types.
COBISS.SI-ID: 9568852