The contribution at the Transparent Conductive Materials (TCM) 2012 obtained the best poster award. The study of electrical properties of Ta2O5 and Ta2O5 – Al2O3 – SiO2 (Ta:Al:Si = 8:1:1 atomic ratio), prepared by Chemical Solution Deposition and heated at 250 oC, 300 oC, 350 oC and 400 oC revealed that the mixed-oxide based thin films exhibited lower leakage currents than the pure Ta2O5 films.
E.02 International awards
COBISS.SI-ID: 26235431Ta2O5 and Ta2O5 – Al2O3 – SiO2 (atomic ratio Ta:Al:Si = 8:1:1) thin films processed at 300 and 350 oC were studied for possible use as gate dielectrics in thin-film transistors (TFTs). Metal-insulator-semiconductor structures of the high-K dielectric layers were characterized by analyzing capacitance-voltage curves recorded at different frequencies. TFTs with the solution-derived gate insulators and sputtered gallium indium zinc oxide (GIZO) channel layer rendered good operating properties, such as on-off ratio above 10^8, turn-on voltage between -1 and 0 V and field-effect mobility above 10 cm^2/Vs. Therefore, both Ta2O5 and 8:1:1 thin films from solution proved to be suitable for TFT applications.
B.03 Paper at an international scientific conference
COBISS.SI-ID: 28050215In the contribution patterning of 2D-structures of Ta2O5-based dielectrics for capacitors or gate insulators in thin-film transistors is presented. Alkoxide-based organic solutions originally designed for chemical solution deposition of thin films were modified in terms of surface tension and viscosity to be suitable for piezoelectric inkjet printing. All inks were stable and jetting even after long periods of time. The printing parameters including the temperatures of the cartridge, waveform, drop spacing, and the substrate temperature were adjusted to allow patterning of 2D structures on selected substrates.
B.03 Paper at an international scientific conference
COBISS.SI-ID: 27755303The topic of the plenary lecture at the Transparent Conductive Materials (TCM) 2012 meeting was the use of ink-jet printing for patterning the structures of functional materials, which is currently a field of extensive research. The design of the structure is made directly in the computer, it needs low amounts of materials, it reduces wastes and costs, and the scalability to large area manufacturing is possible. Therefore the ink-jet printing technology found its use in a lot of different applications, like thin film transistors, light-emitting diodes, solar cells, and so on. In the printing ink, the functional material is either suspended or dissolved in a carrier liquid. The fluid properties of the ink which influence the drop formation include viscosity and surface tension.
B.04 Guest lecture
COBISS.SI-ID: 26234919