The high-k dielectric Ta2O5-Al2O3-SiO2 based thin films were prepared by spin coating the precursor solutions onto platinized silicon and glass substrates. In order to investigate the effect of composition and thermal treatment upon their properties, the as-prepared films were heated at 450°C. Regardless their composition and the substrate used, the films are amorphous and show very flat surfaces. All samples exhibit high optical transparency in the visible range. The dielectric permittivity of the films ranges from about 20 to about 28 for pure Ta2O5, The latter value is comparable to the one reported for amorphous Ta2O5 films.
B.03 Paper at an international scientific conference
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