The present study reports on the preparation of solution-derived Ta2O5-based high-K dielectric thin films suitable for transparent electronic devices. Thin films of the ternary composition Ta2O5 – Al2O3 – SiO2 with the Ta:Al:Si = 8:1:1 atomic ratio and pure Ta2O5 were processed at 400 °C. The XPS surface composition analysis showed that the surfaces of both films were fully oxidized. The samples were amorphous, and had smooth and flat surfaces with low average roughness. In the visible range they exhibited optical transparency higher than 70%. Their dielectric permittivity values were in the range from 19 to 25.
COBISS.SI-ID: 27169831