Dielectric properties of BaxSr(1-x)TiO3 (x=0.5, 0.4 and 0.3) thin films on polished polycrystalline alumina substrates were prepared by chemical solution deposition and rapid thermally annealed at 900 °C. By repeating the deposition and annealing steps films with thicknesses up to 500 nm range were prepared. The about 170 nm thick films reached the highest values of the dielectric permittivity, namely ~1300 and ~1200, measured at 100 kHz and 10 GHz, respectively. The tunability, expressed as the ratio of the permittivities at 0 V and 40 V at 100 kHz, was 3.98.
B.03 Paper at an international scientific conference
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