The evolution of microstructure upon rapid thermal annealing between 600 and 900 oC was discussed in the contribution. The films, annealed up to about 840 oC exhibited fine, equiaxed microstructures, while at higher temperatures a predominantly columnar microstructure developed. The dielectric permittivity showed a concurrent increase.
B.03 Paper at an international scientific conference
COBISS.SI-ID: 28503079In the contribution we explained the dependence of the dielectric properties on the film-thickness, grain size and biaxial stresses which develop in the films due to the thermal expansion mismatch between the film and the substrate.
B.03 Paper at an international scientific conference
COBISS.SI-ID: 28940071