High quality AlGaN thin films are grown on sapphire with MOCVD. Their specific properties are useful for generation and detection of light in the ultraviolet spectrum.
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COBISS.SI-ID: 2688100In this research, refractive indices of III-metal-polar and N-polar AlGaN thin films are measured by ellipsometry and compared to our previous prism-coupling measurements. Also, mode propagation losses at several wavelengths are measured and compared between the different AlGaN waveguides. Second harmonic signal in the visible region is obtained in GaN waveguides by modal phase matching to test the nonlinear response. Data generated through this research is crucial for achieving efficient integrated UV laser source.
B.03 Paper at an international scientific conference
COBISS.SI-ID: 2656356AlGaN can be used for the fabrication of lateral polar structures by a periodic inversion of the c-axis as achieved by a polarity control scheme during its growth by metal organic chemical vapor deposition (MOCVD). These structures can be used for second harmonic generation in the ultraviolet spectral region, as well as for lateral p/n-junctions leading to LEDs and laser diodes.
B.03 Paper at an international scientific conference
COBISS.SI-ID: 2739556