Characterization, analysis and modeling of physical phenomena in thin layers for application in MOS nanodevices

The subjects of project research will be characterization, analysis and modeling of physical phenomena in dielectric nanolayers of SiO2 and its replacements, such as ??2?5, Ru(Ru?2)/??2?5, for application in advanced MOS devices, including phenomena near both dielectric-Si and dielectric-gate interfaces (different metal gates). Additionally, new TFT (Thin Film Transistor) structures based on different semiconductor materials will be investigated and characterized. The following results are expected: 1. Explanation of physical mechanisms responsible for degradation of oxide nanolayer near the SiO2-Si interface in order to obtain highly reliable VDMOS devices for applications under the harsh conditions and in radiation environment. 2. Development of reliable ??2?5 dielectric nanolayers and dielectric structures such as Ru(Ru?2)/??2?5 for application in new generation DRAMs. 3. Optimization of electrical parameters of new metal-dielectric structures for applications in the next generations of DRAM and CMOS circuits. 4. Investigations of operation and development of electrical models for new TFT structures based on CdSe nanolayers for organic LED displays, new single- and multi-junction solar cells based on III-V semiconductor nanolayers for efficient solar panels, as well as high sensitivity MOS magnetic sensors in SOI technology. 5. Realization of new computer-driven system for electrical characterization of MOS micro- and nanodevices.