Projects / Programmes
Raziskava kritičnih pojavov v polprevodniških, senzorskih in aktuatorskih strukturah (Slovene)
Code |
Science |
Field |
Subfield |
2.09.02 |
Engineering sciences and technologies |
Electronic components and technologies |
Electronic components |
Code |
Science |
Field |
T001 |
Technological sciences |
Electronics and Electrical technology |
radiation detector structures, JFET structures, JFET integration, deffects, SiGe structures, bandgap narrowing, hole effective mass,low temperature measurements, process modeling, device modeling, micromachining, 3D structures, sensor structures, actuator structures, piezoresistivity, membranes, bossed membranes, 3D structures integration, wet etching, dry etching, plasma etch, isotropic etching, anisotropic etching, etch selfcompensation, wafer bonding
Researchers (8)
no. |
Code |
Name and surname |
Research area |
Role |
Period |
No. of publicationsNo. of publications |
1. |
11682 |
MSc Uroš Aljančič |
Electronic components and technologies |
Researcher |
2000 - 2001 |
206 |
2. |
01926 |
PhD Slavko Amon |
Electronic components and technologies |
Head |
2000 - 2001 |
473 |
3. |
17125 |
Matjaž Cvar |
|
Researcher |
2000 - 2001 |
8 |
4. |
04721 |
PhD Andrej Levstek |
Electronic components and technologies |
Researcher |
1999 - 2001 |
103 |
5. |
02313 |
PhD Boštjan Peršič |
Energy engineering |
Researcher |
1999 - 2001 |
138 |
6. |
05075 |
PhD Drago Resnik |
Electronic components and technologies |
Researcher |
2000 - 2001 |
261 |
7. |
04383 |
PhD Danilo Vrtačnik |
Electronic components and technologies |
Researcher |
1999 - 2001 |
309 |
8. |
17129 |
Marijan Žurga |
|
Researcher |
1999 - 2001 |
0 |
Organisations (1)
Abstract
Based on our previous research work, the proposed research programm will be focused into several topics in the field of semiconductor, sensor and actuator advanced structures. Basic effects in these structures will be studied. Originating on these new data, an improved understanding of new structures will result.
Reverse, breakdown and junction termination properties of semiconductor, sensor and actuator structures will be studied, enabling understanding and design of improved devices, sensors and actuators.
Effects in radiation detector structures will be studied in detail, revealing new possibilities for improved understanding of operation and realization of advanced structures.
Defects in semiconductor structures such as stacking faults, deffects oxides etc. always play an important role and therefore their detailed study is inevitable for understanding the operation of advanced structures.
Research on the transport properties of free charge carriers in SiGe will give improved understanding of these structures, at room and at low temperatures. Research work on advanced model for hole effective mass will result in improved modeling of these devices.
Micromachining, resulting in formation of 3D structures is the basis for the design and realization of advanced semiconductor, sensor and actuator structures. The proposed research topic in the field of Si micromachining will result in deeper understanding of the basic effects in these structures.