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Projects / Programmes source: ARIS

Raziskava kritičnih pojavov v polprevodniških, senzorskih in aktuatorskih strukturah (Slovene)

Research activity

Code Science Field Subfield
2.09.02  Engineering sciences and technologies  Electronic components and technologies  Electronic components 

Code Science Field
T001  Technological sciences  Electronics and Electrical technology 
Keywords
radiation detector structures, JFET structures, JFET integration, deffects, SiGe structures, bandgap narrowing, hole effective mass,low temperature measurements, process modeling, device modeling, micromachining, 3D structures, sensor structures, actuator structures, piezoresistivity, membranes, bossed membranes, 3D structures integration, wet etching, dry etching, plasma etch, isotropic etching, anisotropic etching, etch selfcompensation, wafer bonding
Evaluation (rules)
source: COBISS
Researchers (8)
no. Code Name and surname Research area Role Period No. of publicationsNo. of publications
1.  11682  MSc Uroš Aljančič  Electronic components and technologies  Researcher  2000 - 2001  206 
2.  01926  PhD Slavko Amon  Electronic components and technologies  Head  2000 - 2001  473 
3.  17125  Matjaž Cvar    Researcher  2000 - 2001 
4.  04721  PhD Andrej Levstek  Electronic components and technologies  Researcher  1999 - 2001  103 
5.  02313  PhD Boštjan Peršič  Energy engineering  Researcher  1999 - 2001  138 
6.  05075  PhD Drago Resnik  Electronic components and technologies  Researcher  2000 - 2001  261 
7.  04383  PhD Danilo Vrtačnik  Electronic components and technologies  Researcher  1999 - 2001  309 
8.  17129  Marijan Žurga    Researcher  1999 - 2001 
Organisations (1)
no. Code Research organisation City Registration number No. of publicationsNo. of publications
1.  1538  University of Ljubljana, Faculty of Electrical Engineering  Ljubljana  1626965  27,847 
Abstract
Based on our previous research work, the proposed research programm will be focused into several topics in the field of semiconductor, sensor and actuator advanced structures. Basic effects in these structures will be studied. Originating on these new data, an improved understanding of new structures will result. Reverse, breakdown and junction termination properties of semiconductor, sensor and actuator structures will be studied, enabling understanding and design of improved devices, sensors and actuators. Effects in radiation detector structures will be studied in detail, revealing new possibilities for improved understanding of operation and realization of advanced structures. Defects in semiconductor structures such as stacking faults, deffects oxides etc. always play an important role and therefore their detailed study is inevitable for understanding the operation of advanced structures. Research on the transport properties of free charge carriers in SiGe will give improved understanding of these structures, at room and at low temperatures. Research work on advanced model for hole effective mass will result in improved modeling of these devices. Micromachining, resulting in formation of 3D structures is the basis for the design and realization of advanced semiconductor, sensor and actuator structures. The proposed research topic in the field of Si micromachining will result in deeper understanding of the basic effects in these structures.
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